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Publication Name |
Publication Type |
Date |
| M. Zaborowski, D. Tomaszewski, Andrzej Panas, Piotr Grabiec, "Double-fin FETs based on standard CMOS approach", 35th International Conference on Micro & Nano Engineering (MNE'09), Ghent (Netherlands) | conference proceedings | Sep 28-Oct 1, 2009 |
| M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez, "2D physics-based compact model of channel length modulation for asymmetrically biased double-gate MOSFETs", ESSDERC Fringe 2009, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| A. Kloes, M. Weidemann, M. Schwarz, "Closed-Form Current Equation for Short-Channel Triple-Gate FETs", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| R. Ritzenthaler, F. Lime and B. Iniguez, "Modeling of the subthreshold characteristics of Triple-Gate Transistors: impact of the channel dimensions and back-gate bias", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| V. Turin, A. V. Sedov, G. I. Zebrev, B. Iniguez, M. S. Shur, "Improvements to ?-Si RPI-TFT model: now extrinsic and with correct account of the positive differential conductivity after saturation", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| J. Alvarado, V. Kilchytska, D. Flandre, "Characterization and Modeling of Single Event Transients in LDMOS-SOI FETs", MOS-AK 2009, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| M. Emam, C. Roda-Neve, D. Vanhoenacker-Janvier and J. P. Raskin, "Electronic Semiconductor Characterization Tool (ESC)", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| A. Sawicka, L. Lukasiak, A. Jakubowski, D. Tomaszewski, "A new compact model for short-channel, symmetric double gate MOSFET", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| A. Sawicka, L. Lukasiak, A. Jakubowski and D. Tomaszewski, "A new compact model for short-channel, symmetric double-gate MOSFET", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| G. Depeyrot, "Guidelines for Verilog-A CM Coding", MOS-AK Workshop, Athens (Greece) | conference proceedings | Sep 18, 2009 |
| M. Weidemann, A. Kloes, M. Schwarz, B. Iniguez, "2D Physics-based Compact Model for Channel Length Modulation in Lightly Doped DG FETs", Proc. 16th Int. Conf. Mixed Design of Integrated Circuits and Systems (MIXDES'09), Lodz (Poland) | conference proceedings | Jun 25-27, 2009 |
| N. Chevillon, M. Tang, F. Pregaldiny, C. Lallement and M. Madec, "FinFET Compact Modelling and parameter extraction", Proc. 16th Int. Conf. Mixed Design of Integrated Circuits and Systems (MIXDES'09), Lodz (Poland) | conference proceedings | Jun 25-27, 2009 |
| J. Alvarado, V. Kilchytska, D. Flandre, J. Conde, M. Estrada and A. Cerdeira, "Continuous Compact Model for MuGFETs Simulations", Proc. 16th Int. Conf. Mixed Design of Integrated Circuits and Systems (MIXDES'09), Lodz (Poland) 45-50 | conference proceedings | Jun 25-27, 2009 |
| D. Tomaszewski, A. Malinowski, M. Zaborowski, P. Salek, L. Lukasiak, A. Jakubowski, "Fluctuations of Electrical Characteristics of FinFET Devices", Proc. 16th Int. Conf. Mixed Design of Integrated Circuits and Systems (MIXDES'09), Lodz (Poland) | conference proceedings | Jun 25-27, 2009 |
| A. Lazaro, A. Cerdeira, B. Nae, M. Estrada, B. Iniguez, "A High Frequency Compact Noise Model for Double-Gate MOSFET Devices", Proc. of the 20th International Conference on Noise and Fluctuations, Pisa (Italy) | conference proceedings | Jun 14-19, 2009 |
| S. K. Vishvakarma, A. K. Saxena, S. Dasgupta, and T. A. Fjeldly, "Analytical Modeling of Double Gate MOSFET Using Back Gate Thickness Variation", Proc. 2nd Int. Workshop. on Electron Dev and Semicond, Techn. (IEDST 2009), Mumbai (India) | conference proceedings | Jun 1-2, 2009 |
| B. Nae, A. Lazaro, B. Iniguez, "High Frequency and Noise Compact Model of Gate- All-Around MOSFETs Including Quantum Effects", Proc. of EUROSOI Workshop, Goteborg (Sweden) | conference proceedings | Jan 19-21, 2009 |
| R. Ritzenthaler, F. Lime, O. Faynot and B. Iniguez, "2D Compact Modeling of the Threshold Voltage in Triple- and Pi-gate Transistors", Proc. of the International Semiconductor Device Research Conference (ISDRS 2009), College Park, MA (USA) | conference proceedings | Dec 9-11, 2009 |
| M. Weidemann, M.Schwarz, and A. Kloes, "Analysis and Modeling of the Pinch-Off Point in a Lightly Doped Asymmetrically Biased Double Gate MOSFET", Proc. of the International Semiconductor Device Research Conference (ISDRS 2009), College Park, MA (USA) | conference proceedings | Dec 9-11, 2009 |
| G. Darbandy, R. Ritzenthaler, F. Lime, B. Iniguez, S. I Garduno, M. Estrada and A. Cerdeira, "Analytical Modeling of the Gate Tunneling Leakage for the Determination of Adequate High-K Dielectrics in 22 nm Double-Gate SOI MOSFETs", Proc. of the International Semiconductor Device Research Conference (ISDRS 2009), College Park, MA (USA) | conference proceedings | Dec 9-11, 2009 |
| M. Schwarz, M. Weidemann, A. Kloes, B. Iniguez, "Two-Dimensional Model for the Potential Profile in a Short Channel Schottky Barrier DG-FET", Proc. of the International Semiconductor Device Research Conference (ISDRS 2009), College Park, MA (USA) | conference proceedings | Dec 9-11, 2009 |
| A. Holen, U. Monga, and T. A. Fjeldly, "Compact Modeling Framework of Nanoscale Double-Gate MOSFET", Proc. 2009 Regional Symposium on Micro and Nano Electronic, (IEEE-RSM2009), Kota Bahru (Malaysia) | conference proceedings | Aug 10-12, 2009 |
| U. Monga and T. A. Fjeldly, "Quantum Mechanical Modeling of Cylindrical Nanowire MOSFET in the Subthreshold Regime", Proc. 2009 Regional Symposium on Micro and Nano Electronic, (IEEE-RSM2009), Kota Bahru (Malaysia) | conference proceedings | Aug 10-12, 2009 |
| G. Depeyrot and F. Poullet, "Need for a standard subset of Verilog-A, with coding practices, for compact modeling", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | April 2-3, 2009 |
| A. Lazaro, A. Cerdeira, B. Nae, M. Estrada and B. Iniguez, "High frequency compact noise modelling of Multi-Gate MOSFETs", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | Apr 2-3, 2009 |
| U. Monga and T. A. Fjeldly, "Quantum Effects in DG FETs", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | Apr 2-3, 2009 |
| P. Martin, G. Ghibaudo and M. Bucher, "Low Frequency Noise Modeling at Low Temperature with the EKV3 Compact Model", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | Apr 2-3, 2009 |
| M. Tang, F. Pregaldiny and C. Lallement, "Quantum compact model for ultra-short and ultra-narrow body FinFET", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | Apr 2-3, 2009 |
| J. Arabas, L. Bartnik, S. Szostak and D. Tomaszewski, "Global extraction of parameters using the EKV model: some properties of the underlying optimization task", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | Apr 2-3, 2009 |
| B. Senapati, K. Molnar, A. Steinmair, E. Seebacher, "Quality of HiSIM: HV Model for Analog Circuit Design", MOS-AK Workshop, Frankfurt Oder (Germany) | conference proceedings | Apr 2-3, 2009 |
| A. Lazaro, A. Cerdeira, B. Nae, M. Estrada, B. Iniguez, "High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor", Journal of Applied Physics 105 (3) 034510 | journal article | 2009 |
| B. Nae, A. Lazaro, B. Iniguez, "High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors", Journal of Applied Physics 105 (7) 074505 | journal article | 2009 |
| U. Monga and T. A. Fjeldly, "Compact Subthreshold Current Modeling of Short-Channel Nanoscale Double-Gate MOSFET", IEEE Transaction on Electron Devices 56 (7) 1533-1537 | journal article | 2009 |
| M. Tang, F. Pregaldiny, C. Lallement and J.-M. Sallese, "Explicit compact model for ultranarrow body FinFETs", IEEE Transaction on Electron Devices 56 (7) 293-296 | journal article | 2009 |
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